vishay siliconix SUP60N06-12P document number: 69070 s10-1475-rev. c, 05-jul-10 www.vishay.com 1 n-channel 60-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? synchronous rectifier ? power supplies product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) 60 0.012 at v gs = 10 v 60 d 33 t o-220ab top view gd s ordering information: SUP60N06-12P-e3 (lead (pb)-free) SUP60N06-12P-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. duty cycle ? 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 60 d a t c = 70 c 54 d pulsed drain current i dm 80 avalanche current i as 40 single avalanche energy a l = 0.1 mh e as 80 mj maximum power dissipation a t c = 25 c p d 100 b w t a = 25 c c 3.25 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 1.25
www.vishay.com 2 document number: 69070 s10-1475-rev. c, 05-jul-10 vishay siliconix SUP60N06-12P notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v, v gs = 0 v, t j = 125 c 50 v ds = 60 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds ?? 10 v, v gs = 10 v 80 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a 0.0098 0.012 ? v gs = 10 v, i d = 30 a, t j = 125 c 0.0155 0.019 forward transconductance a g fs v ds = 15 v, i d = 15 a 37 s dynamic b input capacitance c iss v gs = 0 v, v ds = 30 v, f = 1 mhz 1970 pf output capacitance c oss 310 reverse transfer capacitance c rss 110 total gate charge c q g v ds = 30 v, v gs = 10 v, i d = 20 a 33 55 nc gate-source charge c q gs 11 gate-drain charge c q gd 9 gate resistance r g f = 1 mhz 0.3 1.4 2.8 ? tu r n - o n d e l ay t i m e c t d(on) v dd = 30 v, r l = 1.53 ? i d ? 20 a, v gen = 10 v, r g = 1 ? 11 20 ns rise time c t r 11 20 turn-off delay time c t d(off) 16 30 fall time c t f 815 source-drain diode ratings and characteristics t c = 25 c b continuous current i s 60 a pulsed current i sm 80 forward voltage a v sd i f = 10 a, v gs = 0 v 0.84 1.5 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 40 80 ns peak reverse recovery current i rm(rec) 3.2 5.0 a reverse recovery charge q rr 64 120 nc
vishay siliconix SUP60N06-12P document number: 69070 s10-1475-rev. c, 05-jul-10 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current capacitance 0 20 40 60 8 0 0.0 0.5 1.0 1.5 2.0 v gs =10 v thr u8v v gs =6 v v gs =7 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.000 0.005 0.010 0.015 0.020 0204060 8 0 v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 700 1400 2100 2 8 00 015304560 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) transfer characteristics on-resistance vs. gate-to-source voltage gate charge 0 2 4 6 8 10 0246 8 10 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.01 0.02 0.03 0.04 0.05 46 8 10 t j =25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 10 010203040 i d =20a v ds =15 v v ds =45 v v ds =30 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 69070 s10-1475-rev. c, 05-jul-10 vishay siliconix SUP60N06-12P typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature drain-source breakdown vs. junction temperature 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs =10 v i d =15a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 62 66 70 74 - 50 - 25 0 25 50 75 100 125 150 t j - temperat u re (c) b v dss (normalized) i d =1ma source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = - 50 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 1.6 - 1.2 - 0. 8 - 0.4 0.0 0.4 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1ma v ariance ( v ) v gs(th) t j - temperat u re (c) maximum drain current vs. case temperature 0 15 30 45 60 75 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a)
vishay siliconix SUP60N06-12P document number: 69070 s10-1475-rev. c, 05-jul-10 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69070 . normalized thermal transient impedance, junction-to-case 0.1 1 0.1 0.01 0.2 d u ty cycle = 0.5 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02 single p u lse s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
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